📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching (2020)

First Author: Massabuau F

Attributed to: Non-polar nitride quantum dots for application in single photon sources funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.50208

Publication URI: https://www.repository.cam.ac.uk/handle/1810/303132

Type: Journal Article/Review