Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells (2018)
Attributed to:
Instrument to identify defects and impurities in wide band gap semiconductors via excited states
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.35082
Publication URI: https://www.repository.cam.ac.uk/handle/1810/287767
Type: Journal Article/Review