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Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells (2018)

First Author: Halsall M

Attributed to: Instrument to identify defects and impurities in wide band gap semiconductors via excited states funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.35082

Publication URI: https://www.repository.cam.ac.uk/handle/1810/287767

Type: Journal Article/Review