Promoting Low-Voltage Saturation in High-Performance a-InGaZnO Source-Gated Transistors (2024)

First Author: Bestelink E

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.104069

Publication URI: https://www.repository.cam.ac.uk/handle/1810/360837

Type: Journal Article/Review