Promoting Low-Voltage Saturation in High-Performance a-InGaZnO Source-Gated Transistors (2024)
Attributed to:
Low Dimensional Electronic Device Fabrication at Low Cost over Large Areas: Follow-on
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.104069
Publication URI: https://www.repository.cam.ac.uk/handle/1810/360837
Type: Journal Article/Review