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Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures (2016)

First Author: Badcock T

Attributed to: Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.6639

Publication URI: https://www.repository.cam.ac.uk/handle/1810/261451

Type: Journal Article/Review