Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures (2016)
Attributed to:
Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.6639
Publication URI: https://www.repository.cam.ac.uk/handle/1810/261451
Type: Journal Article/Review