The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM (2017)

First Author: Sedghi N
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.8529

Publication URI: https://www.repository.cam.ac.uk/handle/1810/263219

Type: Journal Article/Review