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The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem (2017)

First Author: Humphreys C

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.9123

Publication URI: https://www.repository.cam.ac.uk/handle/1810/263753

Type: Journal Article/Review