Instability mechanisms in amorphous oxide semiconductors leading to a threshold voltage shift in thin film transistors (2017)

First Author: Flewitt A
Attributed to:  The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.11333

Publication URI: https://www.repository.cam.ac.uk/handle/1810/265681

Type: Journal Article/Review