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Direct transition of a HfGeTe 4 ternary transition-metal chalcogenide monolayer with a zigzag van der Waals gap (2018)

First Author: Saito Y
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.34196

Publication URI: https://www.repository.cam.ac.uk/handle/1810/286887

Type: Journal Article/Review