Creating Ferromagnetic Insulating La0.9Ba0.1MnO3 Thin Films by Tuning Lateral Coherence Length (2021)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.64098
Publication URI: https://www.repository.cam.ac.uk/handle/1810/316986
Type: Journal Article/Review