High-Throughput Electronic Structures and Ferroelectric Interfaces of HfO2 by GGA+U(d,p) Calculations (2021)

First Author: Guo Y
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.74254

Publication URI: https://www.repository.cam.ac.uk/handle/1810/326806

Type: Journal Article/Review