Surface chemistry and porosity engineering through etching reveal ultrafast oxygen reduction kinetics below 400 °C in B-site exposed (La,Sr)(Co,Fe)O3 thin-films (2022)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.80084
Publication URI: https://www.repository.cam.ac.uk/handle/1810/332639
Type: Journal Article/Review