Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth (2017)

First Author: Qian H
Attributed to:  EPSRC Manufacturing Fellowship in Gallium Nitride funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.9303

Publication URI: https://www.repository.cam.ac.uk/handle/1810/263927

Type: Journal Article/Review