Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth (2017)

First Author: Massabuau F

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.12591

Publication URI: https://www.repository.cam.ac.uk/handle/1810/266345

Type: Journal Article/Review