Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors (2018)

First Author: Tang F
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.20784

Publication URI: https://www.repository.cam.ac.uk/handle/1810/273725

Type: Journal Article/Review