Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode (2018)
Attributed to:
Sir Henry Royce InsStitute - recurrent grant
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.22491
Publication URI: https://www.repository.cam.ac.uk/handle/1810/278702
Type: Journal Article/Review