Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material. (2018)

First Author: Konstantinou K
Attributed to:  Development and Application of Non-Equilibrium Doping in Amorphous Chalcogenides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.26030

Publication URI: https://www.repository.cam.ac.uk/handle/1810/278677

Type: Journal Article/Review