Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent-Level Iodine-, Oxygen-, and Bismuth-Related Surface Defects (2020)
Attributed to:
Equipment Account: Integrated Thin Film Deposition and Analysis System
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.48175
Publication URI: https://www.repository.cam.ac.uk/handle/1810/301098
Type: Journal Article/Review