Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate (2019)
Attributed to:
Sir Henry Royce Institute - Cambridge Equipment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.55843
Publication URI: https://www.repository.cam.ac.uk/handle/1810/308754
Type: Journal Article/Review