Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate (2019)

First Author: Pagnano D
Attributed to:  Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.55843

Publication URI: https://www.repository.cam.ac.uk/handle/1810/308754

Type: Journal Article/Review