The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors (2021)

First Author: Simatos D

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.66965

Publication URI: https://www.repository.cam.ac.uk/handle/1810/319841

Type: Journal Article/Review