Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells (2021)
Attributed to:
Lighting the Future
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.74283
Publication URI: https://www.repository.cam.ac.uk/handle/1810/326835
Type: Journal Article/Review