Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells (2021)

First Author: Church S

Attributed to: Beyond Blue: New Horizons in Nitrides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48420/14754504.v1

Publication URI: https://figshare.manchester.ac.uk/articles/journal_contribution/Effect_of_Si-doped_InGaN_underlayers_on_photoluminescence_efficiency_and_recombination_dynamics_in_InGaN_GaN_quantum_wells/14754504/1

Type: Other