Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD (2023)

First Author: Ghosh S
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.94625

Publication URI: https://www.repository.cam.ac.uk/handle/1810/347208

Type: Journal Article/Review