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High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy (2024)

First Author: Mtunzi M

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ad31e0

Publication URI: http://dx.doi.org/10.1088/1361-6463/ad31e0

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 25