Effects of phosphorous and antimony doping on thin Ge layers grown on Si. (2024)

First Author: Yu X
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41598-024-57937-8

PubMed Identifier: 38575676

Publication URI: http://europepmc.org/abstract/MED/38575676

Type: Journal Article/Review

Volume: 14

Parent Publication: Scientific reports

Issue: 1

ISSN: 2045-2322