Effects of phosphorous and antimony doping on thin Ge layers grown on Si. (2024)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41598-024-57937-8
PubMed Identifier: 38575676
Publication URI: http://europepmc.org/abstract/MED/38575676
Type: Journal Article/Review
Volume: 14
Parent Publication: Scientific reports
Issue: 1
ISSN: 2045-2322