Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate (2024)
Attributed to:
TESiC-SuperJ - Trench Epitaxy for SiC Superjunctions: technology enabling low loss HVDC power electronics.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma17071587
Publication URI: http://dx.doi.org/10.3390/ma17071587
Type: Journal Article/Review
Parent Publication: Materials
Issue: 7