Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate. (2024)
Attributed to:
TESiC-SuperJ - Trench Epitaxy for SiC Superjunctions: technology enabling low loss HVDC power electronics.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma17071587
PubMed Identifier: 38612100
Publication URI: http://europepmc.org/abstract/MED/38612100
Type: Journal Article/Review
Volume: 17
Parent Publication: Materials (Basel, Switzerland)
Issue: 7
ISSN: 1996-1944