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Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate. (2024)

First Author: Colston G

Attributed to: TESiC-SuperJ - Trench Epitaxy for SiC Superjunctions: technology enabling low loss HVDC power electronics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma17071587

PubMed Identifier: 38612100

Publication URI: http://europepmc.org/abstract/MED/38612100

Type: Journal Article/Review

Volume: 17

Parent Publication: Materials (Basel, Switzerland)

Issue: 7

ISSN: 1996-1944