Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance (2024)
Attributed to:
Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1007/s13391-023-00481-w
Publication URI: http://dx.doi.org/10.1007/s13391-023-00481-w
Type: Journal Article/Review
Parent Publication: Electronic Materials Letters