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Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance (2024)

First Author: Napari M

Attributed to: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1007/s13391-023-00481-w

Publication URI: http://dx.doi.org/10.1007/s13391-023-00481-w

Type: Journal Article/Review

Parent Publication: Electronic Materials Letters

Issue: 4