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Strain-Compensated Type-II $\text{GaAs}_{1-x}\text{Bi}_{x}/\text{GaN}_{y}\text{As}_{1-y}$ "W" Quantum Wells for GaAs-Based Telecom Lasers (2022)

First Author: Davidson Z

Attributed to: Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/cleo-pr62338.2022.10432181

Publication URI: http://dx.doi.org/10.1109/cleo-pr62338.2022.10432181

Type: Conference/Paper/Proceeding/Abstract