📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Epitaxial trench refill of 4H-SiC by chlorinated chemistry (2024)

First Author: Colston G

Attributed to: TESiC-SuperJ - Trench Epitaxy for SiC Superjunctions: technology enabling low loss HVDC power electronics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0210680

Publication URI: http://dx.doi.org/10.1063/5.0210680

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 19