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Selective Oxidation during AFM Electrical Characterization of Doped SiC Layers (2023)

First Author: Germanicus R

Attributed to: TESiC-SuperJ - Trench Epitaxy for SiC Superjunctions: technology enabling low loss HVDC power electronics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/p-666z18

Publication URI: http://dx.doi.org/10.4028/p-666z18

Type: Journal Article/Review

Parent Publication: Materials Science Forum