Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides (2016)
Attributed to:
Integration of Novel Materials in Spintronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.6814
Publication URI: https://www.repository.cam.ac.uk/handle/1810/261606
Type: Journal Article/Review