Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers (2018)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.30431
Publication URI: https://www.repository.cam.ac.uk/handle/1810/283069
Type: Journal Article/Review