Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor (2019)

First Author: Findlay E

Attributed to: New Power Device Architectures in Silicon funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.39047

Publication URI: https://www.repository.cam.ac.uk/handle/1810/291889

Type: Journal Article/Review