Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric-antiferromagnetic-ferrimagnetic nanocomposites (2021)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.71558
Publication URI: https://www.repository.cam.ac.uk/handle/1810/324101
Type: Journal Article/Review