Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells (2021)
Attributed to:
Beyond Blue: New Horizons in Nitrides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48420/14754504.v1
Type: Other