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FeGa (0/-) acceptor level as a reference energy level in dilute AlxGa1-xN (2024)

First Author: Kruszewski P

Attributed to: Instrument to identify defects and impurities in wide band gap semiconductors via excited states funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0209022

Publication URI: http://dx.doi.org/10.1063/5.0209022

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 23