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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy (2024)

First Author: Chen C

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0203646

Publication URI: http://dx.doi.org/10.1063/5.0203646

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 23