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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy (2024)

First Author: Chen C

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.108916

Publication URI: https://www.repository.cam.ac.uk/handle/1810/368876

Type: Journal Article/Review