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The effect of FeGa (0/-) level presence on material properties in dilute AlxGa1-xN layers (2024)

First Author: Sun L

Attributed to: Instrument to identify defects and impurities in wide band gap semiconductors via excited states funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0205998

Publication URI: http://dx.doi.org/10.1063/5.0205998

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 17