📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance (2024)

First Author: Melnyk K

Attributed to: Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3435181

Publication URI: http://dx.doi.org/10.1109/ted.2024.3435181

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 9