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High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs (2024)

First Author: Hosseinzadehlish M

Attributed to: High-Density Active Silicon Carbide Power Electronics: Enabling Responsive Power Conversion funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ojia.2024.3409153

Publication URI: http://dx.doi.org/10.1109/ojia.2024.3409153

Type: Journal Article/Review

Parent Publication: IEEE Open Journal of Industry Applications