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Impact of Intrinsic Parameter Dispersion on Short-Circuit Reliability of Parallel-Connected Planar and Trench SiC MOSFETs (2024)

First Author: Yu R

Attributed to: High-Density Active Silicon Carbide Power Electronics: Enabling Responsive Power Conversion funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tie.2024.3383026

Publication URI: http://dx.doi.org/10.1109/tie.2024.3383026

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industrial Electronics

Issue: 12