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Impact of Layout Parameter Mismatches on Short Circuit Reliability of Parallel-Connected Planar, Trench, and Double-Trench SiC MOSFETs (2024)

First Author: Yu R

Attributed to: High-Density Active Silicon Carbide Power Electronics: Enabling Responsive Power Conversion funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tdmr.2024.3431707

Publication URI: http://dx.doi.org/10.1109/tdmr.2024.3431707

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Device and Materials Reliability

Issue: 3