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GaAsSb/AlGaAsSb Avalanche Photodiode With High Gain-Linearity (2024)

First Author: Cao Y

Attributed to: Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3440279

Publication URI: http://dx.doi.org/10.1109/ted.2024.3440279

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 10