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High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode (2024)

First Author: Qi Y

Attributed to: Silicon Carbide Power Conversion for Telecommunications Satellite Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/p-hytk19

Publication URI: http://dx.doi.org/10.4028/p-hytk19

Type: Journal Article/Review

Parent Publication: Solid State Phenomena