Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon (2024)

First Author: Liu S
Attributed to:  C-band quantum-dot lasers on monolithically grown Si platform funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0219507

Publication URI: http://dx.doi.org/10.1063/5.0219507

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 8

ISSN: 0003-6951