📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications (2024)

First Author: Kotagama V

Attributed to: Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/p-4px5zx

Publication URI: http://dx.doi.org/10.4028/p-4px5zx

Type: Journal Article/Review

Parent Publication: Solid State Phenomena