Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: saturation of localisation sites versus Auger-Meitner recombination (2024)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ad8bd4
Publication URI: http://dx.doi.org/10.1088/1361-6463/ad8bd4
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 4