Fabrication of uniform, periodic arrays of exotic AlN nanoholes by combining dry etching and hot selective wet etching, accessing geometries unrealisable from wet etching of planar AlN (2025)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2024.112263
Publication URI: http://dx.doi.org/10.1016/j.mee.2024.112263
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering