📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy (2024)

First Author: Makarovsky O

Attributed to: Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s43246-024-00633-x

Publication URI: http://dx.doi.org/10.1038/s43246-024-00633-x

Type: Journal Article/Review

Parent Publication: Communications Materials

Issue: 1